 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 23.5-26.5 GHz GaAs MMIC Power Amplifier AA026P2-00 Features I Single Bias Supply Operation (6 V) I 17 dB Typical Small Signal Gain I 24 dBm Typical P1 dB Output Power at 26.5 GHz I 100% On-Wafer RF and DC Testing I 100% Visual Inspection to MIL-STD MT 2010 0.130 1.014 Chip Outline 3.080 2.960 2.068 Description Alpha's three-stage balanced K band GaAs MMIC power amplifier has a typical P1 dB of 24 dBm and a typical PSAT of 26 dBm at 26.5 GHz. The chip uses Alpha's proven 0.25 m MESFET technology, and is based upon MBE layers and electron beam lithography for the highest uniformity and repeatability. The FETs employ surface passivation to ensure a rugged, reliable part with through-substrate via holes and gold-based backside metallization to facilitate a conductive epoxy die attach process. All chips are screened for small signal S-parameters and power characteristics prior to shipment for guaranteed performance. A broad range of applications exist in both the commercial and military areas where high power and gain are required. 0.000 0.000 0.605 1.271 2.510 3.230 Dimensions indicated in mm. All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide. Chip thickness = 0.1 mm. Absolute Maximum Ratings Characteristic Operating Temperature (TC) Storage Temperature (TST) Bias Voltage (VD) Power In (PIN) Junction Temperature (TJ) Value -55C to +90C -65C to +150C 7 VDC 22 dBm 175C Electrical Specifications at 25C (VDS = 6 V) Parameter Drain Current (at Saturation) Small Signal Gain Input Return Loss Output Return Loss Output Power at 1 dB Gain Compression Saturated Output Power Gain at Saturation Thermal Resistance1 1. Calculated value based on measurement of discrete FET. 2. Typical represents the median parameter value across the specified frequency range for the median chip. Condition F = 23.5-26.5 GHz F = 23.5-26.5 GHz F = 23.5-26.5 GHz F = 26.5 GHz F = 26.5 GHz F = 26.5 GHz Symbol IDS G RLI RLO P1 dB PSAT GSAT JC Min. 15 Typ.2 520 17 -17 -20 Max. 700 -10 -10 Unit mA dB dB dB dBm dBm dB C/W 23 24 24 26 14 17 Alpha Industries, Inc. [781] 935-5150 * Fax [617] 824-4579 * Email sales@alphaind.com * www.alphaind.com Specifications subject to change without notice. 12/99A 1 23.5-26.5 GHz GaAs MMIC Power Amplifier AA026P2-00 Typical Performance Data 20 10 0 S21 25 30 -10 -20 S22 S11 POUT (dBm) 20 15 10 5 0 -10 (dB) -30 -40 -50 20 21 22 23 24 25 26 27 28 29 30 -7 -4 -1 2 5 8 11 Frequency (GHz) PIN (dBm) Typical Small Signal Performance S-Parameters (VDS = 6 V) Output Characteristics as a Function of Input Drive Level (F = 26.5 GHz, VDS = 6 V) Bias Arrangement 6V .01 F 50 pF Circuit Schematic RF IN Detail A VDS RF OUT RF IN 6V .01 F 50 pF SEE DETAIL A RF OUT For biasing on, adjust VDS from zero to the desired value (6 V recommended). For biasing off, reverse the biasing on procedure. VDS 2 Alpha Industries, Inc. [781] 935-5150 * Fax [617] 824-4579 * Email sales@alphaind.com * www.alphaind.com Specifications subject to change without notice. 12/99A |
Price & Availability of AA026P2-00
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |